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USComponent.com - IGBT Distributor

Global IGBT distributor. Wide products line up fast delivery of IGBTs, IGBT modules Infineon International rectifier Ixys Mitsubishi Niec Power-one pow

Infineon to Debut Automotive SiC Schottky Diode Products -

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Infineon to acquire Wolfspeed for $850 million | Chip Design

Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) and Cree, Inc. (Nasdaq: CREE) announced today that it has entered into a definitive agreement to

IDH12G65C6XKSA1 by Infineon Technologies AG | Rectifiers |

Products Microcontroller (MCU) 32-bit Industrial Microcontroller based on ARM® Cortex®-M 32-bit XMC1000 Industrial Microcontroller ARM® Cortex

Carbide Wafer Supply Agreement with Infineon | Business Wire

2018226-Cree, Inc. announces it signed a strategic long-term agreement to produce and supply Wolfspeed silicon carbide (SiC) wafers to Infineon Tech

Infineon()IDDD20G65C6XTMA1(SIC DIODES)_

Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. About Infineon Technology Featured produc

Infineon Introduces 5th Generation thinQ!™ SiC Schottky

2012926-Infineon announces the expansion of its SiC (Silicon Carbide) portfolio with the introduction of the 650V thinQ! ™ SiC Schottky Barrier Dio

XC27x3X - Infineon Technologies

Consult Infineon Technologies - Sensorss Product Brief 1200V CoolSiC N SiC JFET brochure on DirectIndustry. Page: 1/2 Product Brief 1200V CoolSiC

Energy Efficiency for Switch Mode Power Supplies – Infineon

Infineon’s energy efficient products including high and low voltage MOSFETs, SiC schottky barrier diodes, driver ICs, and more available at Digi-Key. B

IDH20G65C5 (INFINEON) PDF IDH20G65C5 IC

2018915- FASTON terminal products, FPGAs, ground capacitors, HDT series, HDT0001, Infineon – New Generation 5 SiC Diodes Enables a New Level of

Infineon Releases Revolutionary CoolSiC™ 1200V SiC JFET

IFNNY) introduced the new CoolSiC™ 1200V SiC JFET family, which strengthens Infineon’s market leadership in the SiC (Silicon Carbide) product

Infineon Discloses 1200 V SiC MOSFETs for Power Conversion |

Infineon’s first 1200 V CoolSiC MOSFET and a half, Infineon Technologies AG has now extended its SiC technology, called CoolSiC, to high-voltage

Infineon develops SiC diodes for high-frequency power

MUNICH -- Infineon Technologies AG here today announced it has become the first chip maker to produce power Schottky diodes on silicon-carbide (SiC)

Infineon Starts Volume Production of First Full-SiC-Module -

LED LED lighting products smart lighting News Industry Finance ApplicationsLighting Lighting Projects Lighting Column Product News LED C

Power - Infineon Technologies

The product offering provides power stage solutions with highest efficiency Infineon‘s CoolSiC™ Schottky diodes ranging from 600V-1200V improve

CoolSiC™ Schottky Diode 1200V - Infineon Technologies

Products Applications Tools About Infineon Discoveries Careers Newsletter Infineon’s 1200V SiC diode combined with a Si HighSpeed 3 IGBT enables

Infineon Introduces 5th Generation thinQ! SiC Schottky

2012927-Infineon‘s proprietary diffusion soldering process, already introduced SiC diodes are differentiating products, shaping the future of gr

Infineon: SiC modules and more - News

Subscribe More Titles ContactsAdd to my Reading List Remove from my Reading List News Article Infineon: SiC Modules And MoreMonday 5th June 2017

Reliability considerations for recent Infineon SiC diode

Microelectronics Reliability 47 (2007) Reliability considerations for recent Infineon SiC diode releases M. Holz a, *, G. Hultsch b, T. Scherg a, R

Infineon GaN on SiC RF power transistors anticipate 5G |

201598-Infineon is sampling under NDA its first devices in a family of GaN on SiC RF power transistors. The devices allow manufacturers of mobile

C161K, C161O - Infineon Technologies

Microcontroller (MCU) Legacy Products (C500-, C166-, XC166-, AUDO1-Family) C500 Family XC166 Family C166® Family

Infineon Launches Automotive CoolSiC Schottky Diodes at 2018

Infineon Technologies presented the first products of its automotive Silicon Carbide portfolio: the CoolSiC Schottky diode family at this year’s

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M. Naujoks 2 research works with 72 citations and 54 reads, including: Investigation of CVD SiCOH low-k time-dependent dielectric breakdown at 65nm

1200V SiC MOSFET - /

Infineon to acquireWolfspeed Investor Presentation July 14, 2016 Table of Contents 1 Key facts 2 Copyright © Infineon Technologies AG 2016. All

of IR to strengthen Infineon’s position in both SiC and

Infineon recently agreed to buy International Rectifier for $3 billion. Infineon’s $40-a-share offer represents a 51% premium to International Rectifier