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silicon carbide in application

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20100314629 SILICON CARBIDE SEMICONDUCTOR DEVICE - In order to obtain a silicon carbide semiconductor device that ensures both stability of withstand voltage

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The formation mechanism of silicon carbide channels is attributed to the formation of laser-induced structural change zones in silicon carbide and the

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PubMed journal article Scalable graphene synthesised by plasma-assisted selective reaction on silicon carbide for device application were found in PRIME PubMe

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Ceramics in Nuclear Applications : Silicon Carbide and Carbon-Based Materials for Nuclear Energy Applications.

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especially those made of conventional pressureless sintered silicon carbide (The large valve component shapes required for this application are nearly

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A silicon carbide semiconductor device includes a first semiconductor layer of a first conductivity type provided on a front surface of a semiconductor

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Sensors | Free Full-Text | Silicon Carbide-Based Hydrogen Gas

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