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A silicon carbide semiconductor device includes a first semiconductor layer of a first conductivity type provided on a front surface of a semiconductor

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China Silicon Carbide Industry Report, 2015-2019 | Silicon

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A method for manufacturing a silicon carbide semiconductor device includes the following steps. There is prepared a first silicon carbide layer having a

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Abstract of strongEP0864549/strongbrThere is provided a sintered silicon carbide with graphite added thereto having excellent lubrication characteristic

+ High Voltage Pulsers in Silicon and SiC Silicon Carbide

SILICON CARBIDE SWITCHES are now available both as single and as push-Push-pull switches are preferably be used to generate true symetrical square

on the combined effects of Titania and Silicon carbide on

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Silicon Carbide Semiconductor Device (Sumitomo Electric

A silicon carbide semiconductor device includes an element region and a guard ring region. A semiconductor element is provided in the element region. The

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