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Faisal, N; Kumar, K, 2018: Mechanical and tribological behaviour of nano scaled silicon carbide reinforced aluminium composites The wettability of silicon

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Aluminium or aluminum is a chemical element with silicon and the most abundant metal in the crustNaming after alumina (aluminium oxide), itself named

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a rear surface of the silicon carbide substrate.(insulated gate using a metal oxide film aluminum (Al) as a p-type impurity and an

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We report an experimental determination of the doping-induced metal-insulator transition in aluminum-doped 4H silicon carbide. Low temperature transport

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A silicon carbide semiconductor device includes a first semiconductor layer of a first conductivity type provided on a front surface of a semiconductor

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A silicon carbide semiconductor device includes: an n-type drift layer 2 provided within an SiC layer b30;/b a plurality of p-type well regions

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Methods of forming high voltage silicon carbide power devices utilize high purity silicon carbide drift layers that are derived from high purity silicon

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An edge termination structure for a silicon carbide semiconductor device includes a plurality of spaced apart concentric floating guard rings in a silicon

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Evaluation of Mechanical Properties of Glass Fiber Reinforced Epoxy Polymer Composites with Alumina, Titanium dioxide and Silicon Carbide Fillers

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A silicon carbide device is fabricated by forming a plurality of a same type of silicon carbide devices on at least a portion of a silicon carbide

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