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The inventive method comprises chemically-mechanically polishing a substrate comprising at least one layer of silicon carbide with a polishing composition

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Advances in Silicon Carbide Processing and Applications_

2017510-Advances in Silicon Carbide Processing and Applications_8814443.PDF,---Page1---

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on the combined effects of titania and silicon carbide on

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US Patent for Silicon carbide substrate Patent (Patent # 10,

A silicon carbide substrate is composed of silicon carbide, and when a main surface thereof is etched with chlorine gas, the overall length of linear

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Grains of silicon carbide can be bonded together by sintering to form verymade today and formed the Carborundum Com

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bias temperature instability (BTI) in silicon carbide

A system includes a silicon carbide (SiC) semiconductor device and a hermetically sealed packaging enclosing the SiC semiconductor device. The hermetically

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A silicon carbide semiconductor device and method of manufacture thereof is made by providing a channel control zone which has impurity concentration A

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METHOD OF MAKING COHERENT SHAPE OF SILICON CARBIDE - Emerson

2010919-A coherent shape of silicon carbide is produced by heating particulate silicon carbide to a temperature above 3,000° F. and below 5,500° F

COMPOSITIONS AND METHODS USING SAME FOR DEPOSITION OF SILICON

Described herein are compositions and methods using same for forming a silicon-containing film such as without limitation a silicon carbide, silicon nitride,

phosphorous oxides systems supported on silicon carbide

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phosphorous oxides systems supported on silicon carbide

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US Patent Application for Stop-On Silicon Containing Layer

The CMP stop layer may be made of silicon and systems that can perform CMP for very lowsilicon nitride, silicon oxide, silicon carbide,