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SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR

A silicon carbide semiconductor device includes: an n-type drift layer 2 provided within an SiC layer b30;/b a plurality of p-type well regions

Lattice thermal conductivity in cubic silicon carbide

The lattice thermal conductivity of cubic silicon carbide is evaluated by means of a microscopic model considering the discrete nature of the

controlled, dielectrically isolated beta silicon carbide (

Semiconductor devices useful in high temperature sensing applications include a silicon carbide substrate, a silicon dioxide layer, and an outer layer of

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An efficient and high-quality single-photon sourceAn extreme brightness (2×10 6 counts s -1) A silicon carbide room-temperature single-photon

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US5011799A - In situ production of silicon carbide reinforced

silicon carbide reinforced ceramic composites - (x) +6C→Al.sub.2 O.sub.3(1+x) +2SiC+Kg/mm2 on Vickers hardness scale and fracture

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MANUFACTURING METHOD OF SILICON CARBIDE-BASED HONEYCOMB

A manufacturing method of a silicon carbide-based honeycomb structure, including a firing step of introducing extruded honeycomb formed bodies containing a

A Method to Adjust Polycrystalline Silicon Carbide Etching

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Metallographic 04__

An edge termination structure for a silicon carbide semiconductor device includes a plurality of spaced apart concentric floating guard rings in a silicon

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Silicon carbide semiconductor devices and methods of fabricating silicon carbide semiconductor devices are provided by successively etching a mask layer to

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US Patent for Silicon carbide substrate Patent (Patent # 10,

A silicon carbide substrate is composed of silicon carbide, and when a main surface thereof is etched with chlorine gas, the overall length of linear

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Silicon carbide - Wikipedia

Grains of silicon carbide can be bonded together by sintering to form very hard ceramics that are widely used in appli