
(2018) - Modeling Heat Conduction in Nanoporous Silicon
Nanopores can efficiently reduce the thermal conductivity $\ensuremath{\kappa}$ of a crystalline material, but experimentally it is difficult to find optimal
Nanopores can efficiently reduce the thermal conductivity $\ensuremath{\kappa}$ of a crystalline material, but experimentally it is difficult to find optimal
FULL TEXT Abstract: The ability to engineer the thermal conductivity of materials allows us to control the flow of heat and derive novel functionalities
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Phonon surface scattering controlled length dependence of thermal conductivity of silicon nanowires. Physical Chemistry Chemical Physics 15(35): 14647-14652,
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FULL TEXT Abstract: The ability to engineer the thermal conductivity of materials allows us to control the flow of heat and derive novel functionalities
Download Citation on ResearchGate | Effect of Silicon Carbide Conductive Adhesive on the Performance of Electric-explosive Device | To study the effect of
Kuleyev, I. G.; Kuleyev, I. I.; Bakharev, S. M., 2014: Anisotropy and temperature dependences of thermal conductivity for silicon nanowires Temp
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Grains of silicon carbide can be bonded together by sintering to form very hard ceramics that are widely used in applications requiring high endurance,
Spin defects and transport in hydrogenated nanocrystalline siliconcarbide films dark conductivity, and0038-1098/$ - see front matter q 2003 Elsevier
United States Patent Application 20190006261 Kind Code: A1 Abstract: The wherein the silicon nitride substrate has a thermal conductivity of 50 W/
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The lattice thermal conductivity of cubic silicon carbide is evaluated by means of a microscopic model considering the discrete nature of the
that of the bulk, which will also tend to reduce the thermal conductivity Fabrication of Silicon Carbide Photodiodes with Enhanced High-Temperature
A silicon nitride substrate including silicon nitride crystal grains and a grain boundary phase and having a thermal conductivity of 50 W/m·K or more,
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Abstract: Thermal transport behavior in nanostructures has become increasingly important for understanding and designing next generation electronic and
H01L21/02447—Silicon carbide H—ELECTRICITY conductivity type; a SiGe base region formed on (UHVCVD), rapid thermal chemical vapor deposition
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Author(s): Ren, Zongqing | Advisor(s): Lee, Jaeho | Abstract: While thermal management of nanoscale electronics is becoming more challenging, recent
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Effect of Alignment of Large Grains on the Thermal Conductivity of Self-Reinforced β-Silicon NitrideNaoto HIROSAKI, Motohide ANDO, Yusuke OKAMOTO
The theoretical results of Basu and Nag on the high-field mobility of electrons in Si for any arbitrary direction of field are discussed, taking into
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