
in silicon carbide defect centers (1608.03498) - ScienceWISE
Recently, there has been a strong interest in silicon carbide defects, as © 2009-2018 ScienceWISE project | About | FAQ | Contact us |
Recently, there has been a strong interest in silicon carbide defects, as © 2009-2018 ScienceWISE project | About | FAQ | Contact us |
We show that uniaxial color centers in silicon carbide with hexagonal © 2009-2018 ScienceWISE project | About | FAQ | Contact us |
Optical and electronic properties of two dimensional few layers graphitic silicon carbide (GSiC), in particular monolayer and bilayer, are investigated by
(C:B) in 2004 and silicon (Si:B) in 2006 renew the interest in the SuperconductivitySuperconductorSupercoolingCarbideSemiconductorCritical temperaturePhase
New 142, Nd-144 (n, gamma) Cross Sections and the s-process Origin of the Nd Anomalies in Presolar Meteoric Silicon Carbide Grains
Silicon carbide (SiC) is a compound semiconductor, which is considered as© 2009-2018 ScienceWISE project | About | FAQ | Contact us |
the silicon vacancy defects in the 4H polytype of silicon carbide (SiC).© 2009-2018 ScienceWISE project | About | FAQ | Contact us |
Color centers in silicon carbide have increasingly attracted attention in © 2009-2018 ScienceWISE project | About | FAQ | Contact us |
zero-field splitting in the silicon vacancy centers in 4H silicon carbide.© 2009-2018 ScienceWISE project | About | FAQ | Contact us |
In this work the conduction of ion-water solution through two discrete bundles of armchair carbon and silicon carbide nanotubes, as useful membranes for
silicon carbide (SiC), a compound being highly compatible to up-to-date © 2009-2018 ScienceWISE project | About | FAQ | Contact us |
ScienceWISE Ontology Bookmarks New articles News IntroductionLoginRegisterPoint defects in silicon carbide are rapidly becoming a platform of great
The effective thermal conductivity coefficient of silicon carbide (SiC) synthesis materials and graphitization furnace insulation material were obtained by ap
ScienceWISE Ontology Bookmarks New articles News IntroductionLoginRegisterCarbon p Electron Ferromagnetism in Silicon Carbide Y. Wang, Y. Liu, G
Imitation diamonds can also be made out of materials such as cubic zirconia and silicon carbide. Natural, synthetic and imitation diamonds are most commonly
This result offers a solution for the long-standing problem of silicon in stardust SiC grains, confirms the necessity of coupling chemistry and dynamics
All these results make silicon vacancy defects in silicon carbide very attractive for quantum applications. CarbideQubitQuantum dotsSemiconductorLasersPhononQ
Electrically driven spin resonance in silicon carbide color centers © 2009-2018 ScienceWISE project | About | FAQ | Contact us |
Very recently, silicon carbide (SiC) grains with impurities were suggested © 2009-2018 ScienceWISE project | About | FAQ | Contact us |
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