
Corrosion of silicon carbide ceramics using conventional and
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Theoretical and Experimental Chemistry pp 1–6 Structural Propertie
Containing Papers presented at the 3nd European Conference on Silicon Carbide and Related Materials : September 2-4, 1998, Montpellier, France
in comparison with the conventional AISI H11 tool steel, which contains approximately 1 wt.% silicon, the modified steel AISI H11 (similar to 0.35 wt
E. J. Jung et al., The Synthesis of High-Surface Area Silicon Carbide by Conversion Method Using Carbosilane Polymer, Defect and Diffusion Forum,
JACerS is a leading source for top-quality basic science research and modeling spanning the diverse field of ceramic and glass materials science
J. Ceram. Sci. Tech., 07 [03] (2016) DOI: /JCST available online at: Göller Verlag Production of b-silicon Carbide Nanofibers using the Force
Energetic primary recoil atoms from ion implantation or fast neutron irradiation produce isolated point defects and clusters of both vacancies and interstitia
20121225-The present invention provides a method of producing a silicon carbide semiconductor substrate in which a silicon carbide buffer layer doped
2013912-ChemInform Abstract: Low Temperature Synthesis of Silicon Carbide Nanomaterials Using a Solid‐State Method.Abstract Controlled morphologie
Abstract: Silicon carbide (SiC) ceramic with YAG (Y3Al5O12) additive added by sol-gel method was liquid-phase sintered at different sintering
Investigation on mechanical properties of aluminium 7075-silicon carbide-aluminathe highest tensile strength and hardness using Taguchi method to the
This is another step showing that our method of working with epitaxial graphene on silicon carbide is the right approach and the one that will
Described are silicon carbide filters for use with liquid metals such as liquid tin, as well as methods of using such a filter to remove particles from
2010105-The method addresses what had been a significant obstacle to the use The technique involves etching patterns into the silicon carbide sur
Liu, X; Gao, B; Nakano, S; Kakimoto, K, 2015: Numerical investigation of carbon and silicon carbide contamination during the melting process of the
2015129-A semiconductor device structure according to some embodiments includes a silicon carbide substrate having a first conductivity type, a sili
Improved silicon carbide particles, improved silicon carbide abrasive particles, and abrasive slurry compositions for use chemical mechanical planarization
A super heat-resistant silicon carbide fiber has an oxygen content of less than 1.0% by weight. In a process for producing the super heat-resistant
Silicon carbide (SiC) thin film have been prepared on both Si(100) and SiO sub2/sub patterned Si(100) substrates by the high vacuum metal-
silicon carbide involves the following: i) placing 16 cl, 2 ex, 2 tbl Method of producing using sublimated AlN by placing an AlN source
This invention relates to hot pressed silicon carbide dummy wafers having low iron impurity levels, and a method of using hot pressed silicon carbide dummy
Method for semiconductor processing using silicon carbide article Goela, Jitendra S.Brese, Nathaniel E.Pickering, Michael A
PURPOSE: A method for manufacturing silicon carbide nanofiber using an emulsion electro-spinning method and the silicon carbide nanofiber manufactured by the
#NASATech for #license: Silicon Carbide Fiber Tows Rapid processing method produces stronger materials, even heals lower-
bonded silicon carbide has been investigated in aqueous HCl, HF, HNO3, and H2SO4, using standard immersion and new electrochemical methods
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