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IDH20G65C6XKSA1 by Infineon Technologies AG | Rectifiers |

Microcontroller (MCU) Legacy Products (C500-, C166-, XC166-, AUDO1-Family) C500 Family XC166 Family C166® Family

Energy Efficiency for Switch Mode Power Supplies – Infineon

Infineon’s energy efficient products including high and low voltage MOSFETs, SiC schottky barrier diodes, driver ICs, and more available at Digi-Key. B

Infineon Introduces 5th Generation thinQ! SiC Schottky

2012927-Infineon‘s proprietary diffusion soldering process, already introduced SiC diodes are differentiating products, shaping the future of gr

Infineon Technologies | Discrete Semiconductor Products |

Order today, ships today. IDL06G65C5XUMA1 – Diode Silicon Carbide Schottky 650V 6A (DC) Surface Mount PG-VSON-4 from Infineon Technologies. Pricing

Product Brief 1200V CoolSiC N SiC JFET - Infineon

Consult Infineon Technologies - Sensorss Product Brief 1200V CoolSiC N SiC JFET brochure on DirectIndustry. Page: 1/2 Product Brief 1200V CoolSiC

CoolSiC™ Schottky Diode 1200V - Infineon Technologies

Products Applications Tools About Infineon Discoveries Careers Newsletter Infineon’s 1200V SiC diode combined with a Si HighSpeed 3 IGBT enables

XC22xxN-Series - Infineon Technologies

Products Microcontroller (MCU) 16-bit C166 Microcontroller XE166 Family (Industrial) XC2700 Family (Powertrain) XC2300 Family (Safety) XC2200

Infineon Introduces 5th Generation thinQ!™ SiC Schottky

2012926-Infineon announces the expansion of its SiC (Silicon Carbide) portfolio with the introduction of the 650V thinQ! ™ SiC Schottky Barrier Dio

Reliability considerations for recent Infineon SiC diode

Microelectronics Reliability 47 (2007) Reliability considerations for recent Infineon SiC diode releases M. Holz a, *, G. Hultsch b, T. Scherg a, R

of IR to strengthen Infineon’s position in both SiC and

Infineon recently agreed to buy International Rectifier for $3 billion. Infineon’s $40-a-share offer represents a 51% premium to International Rectifier

Infineon Discloses 1200 V SiC MOSFETs for Power Conversion |

Infineon’s first 1200 V CoolSiC MOSFET and a half, Infineon Technologies AG has now extended its SiC technology, called CoolSiC, to high-voltage

Infineon1200V CoolSiC MOSFET -

2018915- FASTON terminal products, FPGAs, ground capacitors, HDT series, HDT0001, Infineon – New Generation 5 SiC Diodes Enables a New Level of

Infineons Incredible SiC Race - Infineon Technologies

As a pioneer in the commercial use of SiC technology, Infineon has always had a head start in the race for the best silicon carbide products on the

Infineon GaN on SiC RF power transistors anticipate 5G |

201598-Infineon is sampling under NDA its first devices in a family of GaN on SiC RF power transistors. The devices allow manufacturers of mobile

using SiC power semiconductors - 12 March 2014 - Infineon

Figure 3. SiC transistors (eg, SiC JFET from Infineon) in 3rd quadrant – channel mode possible to reduce losses by turning on the channel in free

Infineon Launches Automotive CoolSiC Schottky Diodes at 2018

Infineon Technologies presented the first products of its automotive Silicon Carbide portfolio: the CoolSiC Schottky diode family at this year’s

Power - Infineon Technologies

The product offering provides power stage solutions with highest efficiency Infineon‘s CoolSiC™ Schottky diodes ranging from 600V-1200V improve

Carbide Wafer Supply Agreement with Infineon | Business Wire

2018226-Cree, Inc. announces it signed a strategic long-term agreement to produce and supply Wolfspeed silicon carbide (SiC) wafers to Infineon Tech

Infineon Releases Revolutionary CoolSiC™ 1200V SiC JFET

IFNNY) introduced the new CoolSiC™ 1200V SiC JFET family, which strengthens Infineon’s market leadership in the SiC (Silicon Carbide) product

Infineon to acquire Wolfspeed for $850 million | Chip Design

Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) and Cree, Inc. (Nasdaq: CREE) announced today that it has entered into a definitive agreement to

MOSFET2019

M. Naujoks 2 research works with 72 citations and 54 reads, including: Investigation of CVD SiCOH low-k time-dependent dielectric breakdown at 65nm

Infineon: SiC modules and more - News

Subscribe More Titles ContactsAdd to my Reading List Remove from my Reading List News Article Infineon: SiC Modules And MoreMonday 5th June 2017

Infineon develops SiC diodes for high-frequency power

MUNICH -- Infineon Technologies AG here today announced it has become the first chip maker to produce power Schottky diodes on silicon-carbide (SiC)

IDH12G65C6XKSA1 by Infineon Technologies AG | Rectifiers |

Products Microcontroller (MCU) 32-bit Industrial Microcontroller based on ARM® Cortex®-M 32-bit XMC1000 Industrial Microcontroller ARM® Cortex

USComponent.com - IGBT Distributor

Global IGBT distributor. Wide products line up fast delivery of IGBTs, IGBT modules Infineon International rectifier Ixys Mitsubishi Niec Power-one pow

Infineon Starts Volume Production of First Full-SiC-Module -

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