【PDF】C4D10120D–Silicon Carbide Schottky Diode
C4D10120D–Silicon Carbide Schottky Diode Z-Rec™ Rectifier VRRM = 1200 V IF = 10 A Qc =69 nC Features • 1.2kV Schottky Rectifier • Zero
C4D10120D–Silicon Carbide Schottky Diode Z-Rec™ Rectifier VRRM = 1200 V IF = 10 A Qc =69 nC Features • 1.2kV Schottky Rectifier • Zero
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silicon carbide Schottky diode configured to at least partially bypass a Assignee: Cree, Inc. (Durham, NC, US) Primary Class: 257/335
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C3D665 Silicon Carbide Schottky Diode Z-Rec Rectifier RM = 65 V ( =135 C) = 9 Q c = 15 nc Features 65-Volt Schottky Rectifier Zero Reverse
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Cree Inc.’s latest addition to its 1200V SiC Schottky diode product offering includes four new surface mount devices in 2A, 5A, 8A, and 10A
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C3D08065A datasheet,Page:1, C3D08065A–Silicon Carbide Schottky Diode Z-Rec™ RectifieR Features VRRM = 650 V IF(AVG) = 8 A Qc = 21 nC
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Cree, Inc. , a market leader in silicon carbide power devices, announces a new family of seven 1200V Z-Rec? silicon carbide Schottky diodes
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