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US4585675A - Alumina silicon carbide, and silicon primary

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FULL TEXT Abstract: The corrosion resistance of nanopowders of borides and carbides of metals of IV-VIB groups, as well as of silicon carbide, was

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A silicon carbide substrate is composed of silicon carbide, and when a main surface thereof is etched with chlorine gas, the overall length of linear

- Germanium-silicon-carbide floating gates in memories -

The use of a germanium carbide (GeC), or a germanium silicon carbide (GeSiC) layer as a floating gate material to replace heavily doped polysilicon (

silicon carbide ceramics: a review: Critical Reviews in

Silicon carbide (SiC) is an electrical semiconductor with a wide (KETEP) funded by the Korea Government Ministry of Knowledge Economy


Described are silicon carbide filters for use with liquid metals such as liquid tin, as well as methods of using such a filter to remove particles from

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Innovative Report on Silicon Carbide Fibre Market with Competitive Analysis New Business Developments and Top Companies Saint Gobain UBE Industries Japan Nipp

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US6862970B2 - Boron carbide composite bodies, and methods for

US6862970B2 - Boron carbide composite bodies, and methods for making same having a silicon component with a porous mass having a carbonaceous component

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Z. Ahmad; P. T. Paulette; B. J. A. Aleem, 2000: Mechanism of localized corrosion of aluminumsilicon carbide composites in a chloride containing

damages on grain boundary controlled silicon carbide

Rae Hyeong Ryu; Kee Sung Lee; Young-Wook Kim, 2009: Indentation and contact damages on grain boundary controlled silicon carbide ceramics Silicon infilt

Advanced Metallic-Silicon Carbide Composite Claddings for

reward candidates for future claddings is a silicon carbide (SiC) compositePrototypical fuel rods with the improved cladding will be fabricated and


A method of forming silicon carbide by spark plasma sintering comprises loading a powder comprising silicon carbide into a die and exposing the powder to

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properties of in-situ doped PECVD silicon carbide layer

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Around the world, silicon carbide (SiC) is used as a raw material in several engineering applications because of its various beneficial properties

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A silicon carbide semiconductor device includes: an n-type drift layer 2 provided within an SiC layer b30;/b a plurality of p-type well regions

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6- Apr. 12, 2019 - In early April, silicon carbide prices still running in high level due to the stop production in Gansu Kuangou Industrial P

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A super heat-resistant silicon carbide fiber has an oxygen content of less than 1.0% by weight. In a process for producing the super heat-resistant

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View Patent Images: Download PDF 20190010631 PDF (Korean Patent Application Publication No. 2011-group as in the Example 2, and silicon carbide

transport in hydrogenated nanocrystalline silicon carbide

siliconcarbide films produced by photo-CVD Korea Advanced Institute of Science and Technology