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US4585675A - Alumina silicon carbide, and silicon primary

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FULL TEXT Abstract: The corrosion resistance of nanopowders of borides and carbides of metals of IV-VIB groups, as well as of silicon carbide, was

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US Patent for Silicon carbide substrate Patent (Patent # 10,

A silicon carbide substrate is composed of silicon carbide, and when a main surface thereof is etched with chlorine gas, the overall length of linear

- Germanium-silicon-carbide floating gates in memories -

The use of a germanium carbide (GeC), or a germanium silicon carbide (GeSiC) layer as a floating gate material to replace heavily doped polysilicon (

silicon carbide ceramics: a review: Critical Reviews in

Silicon carbide (SiC) is an electrical semiconductor with a wide (KETEP) funded by the Korea Government Ministry of Knowledge Economy

SILICON CARBIDE FILTER MEMBRANE AND METHODS OF USE - Entegris

Described are silicon carbide filters for use with liquid metals such as liquid tin, as well as methods of using such a filter to remove particles from

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US6862970B2 - Boron carbide composite bodies, and methods for

US6862970B2 - Boron carbide composite bodies, and methods for making same having a silicon component with a porous mass having a carbonaceous component

corrosion of aluminumsilicon carbide composites in a

Z. Ahmad; P. T. Paulette; B. J. A. Aleem, 2000: Mechanism of localized corrosion of aluminumsilicon carbide composites in a chloride containing

damages on grain boundary controlled silicon carbide

Rae Hyeong Ryu; Kee Sung Lee; Young-Wook Kim, 2009: Indentation and contact damages on grain boundary controlled silicon carbide ceramics Silicon infilt

Advanced Metallic-Silicon Carbide Composite Claddings for

reward candidates for future claddings is a silicon carbide (SiC) compositePrototypical fuel rods with the improved cladding will be fabricated and

METHODS OF FORMING ARTICLES INCLUDING SILICON CARBIDE BY

A method of forming silicon carbide by spark plasma sintering comprises loading a powder comprising silicon carbide into a die and exposing the powder to

Why The Silicon Carbide Business Could Be A Big Growth Driver

Semiconductor producer Cree has been steadily reducing its reliance on the competitive and commoditized lighting market while pivoting to power and RF product

properties of in-situ doped PECVD silicon carbide layer

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| Free Full-Text | Fabrication of Silicon Carbide from

Around the world, silicon carbide (SiC) is used as a raw material in several engineering applications because of its various beneficial properties

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SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR

A silicon carbide semiconductor device includes: an n-type drift layer 2 provided within an SiC layer b30;/b a plurality of p-type well regions

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EP0544038A1 - Super heat-resistant silicon carbide fibers and

A super heat-resistant silicon carbide fiber has an oxygen content of less than 1.0% by weight. In a process for producing the super heat-resistant

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View Patent Images: Download PDF 20190010631 PDF (Korean Patent Application Publication No. 2011-group as in the Example 2, and silicon carbide

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siliconcarbide films produced by photo-CVD Korea Advanced Institute of Science and Technology