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silicon carbide healing tube types

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STPSC10H12 - 1200V Power Schottky Silicon Carbide diode - ST

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bias temperature instability (BTI) in silicon carbide

A system includes a silicon carbide (SiC) semiconductor device and a hermetically sealed packaging enclosing the SiC semiconductor device. The hermetically

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- Methods of fabricating delta doped silicon carbide metal

US6902964B2 - Methods of fabricating delta doped silicon carbide metal-semiconductor field effect transistors having a gate disposed in a double recess

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The use of a germanium carbide (GeC), or a germanium silicon carbide (GeSiC) layer as a floating gate material to replace heavily doped polysilicon (

Fowler - Nordheim stress of n-type silicon carbide metal-

Bano, E; Ouisse, T; Leonhard, C; Gölz, A; Kamienski, E G Stein von, 1997: High-field Fowler - Nordheim stress of n-type silicon carbide

Self-Healing of Epitaxial SiC Schottky Barrier Diodes | HTML

Silicon carbide (SiC) has been widely used for electronic radiation detectors and atomic battery sensors. However, the physical properties of SiC exposure

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Silicon carbide is a highly covalent ceramic, so additives like carbon and boron must be present in order to obtain a dense material during sintering

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N. R. Pereira et al., High Current Silicon Carbide Diodes as Dose Measurements of x-ray spectra produced by a tungsten tube operating at

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- Edge termination structures for silicon carbide devices

An edge termination structure for a silicon carbide semiconductor device includes a plurality of spaced apart concentric floating guard rings in a silicon

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Provided are methods and apparatuses for densifying a silicon carbide film using remote plasma treatment. Operations of remote plasma deposition and remote

US Patent Application for SILICON CARBIDE SEMICONDUCTOR

A silicon carbide semiconductor device includes a first semiconductor layer of a first conductivity type provided on a front surface of a semiconductor

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