United Silicon Carbide, inc. - Micross
United Silicon Carbide, Inc. provides record-breaking efficiency, greater power density and higher reliability they any comparable silicon based device with
United Silicon Carbide, Inc. provides record-breaking efficiency, greater power density and higher reliability they any comparable silicon based device with
© 2019 United Silicon Carbide Inc. Privacy Policy We use cookies to ensure that we give you the best experience on our website. If you continue to
© 2019 United Silicon Carbide Inc. Privacy Policy We use cookies to ensure that we give you the best experience on our website. If you continue to
UnitedSiC’s UJ3C and UF3C series of silicon carbide FETs are based on a unique cascode configuration, where a high performance SiC fast JFE
2018524-UnitedSiC’s 1200 V Silicon Carbide FETs deliver industry’s highest-performance upgrade path for IGBT, Si and SiC-MOSFET users
For all die inquiries, contact [email protected] End-of-Life Parts Part NumberPackageVIf typQc typVF typReplacement PartData SheetSPICE ModelBuy Now St
For all die inquiries, contact [email protected] End-of-Life Parts Part NumberPackageVIf typQc typVF typReplacement PartData SheetSPICE ModelBuy Now St
SiC Schottky diodes enable fast switching with very low recovery charge compared to best-in-class Silicon devices. SiC v SiC Competitors UnitedSiC’s SiC
2018524-UnitedSiC’s 1200 V Silicon Carbide FETs deliver industry’s highest-performance upgrade path for IGBT, Si and SiC-MOSFET users
2018524-UnitedSiC’s 1200 V Silicon Carbide FETs deliver industry’s highest-performance upgrade path for IGBT, Si and SiC-MOSFET users
United Silicon Carbide, Inc. 7 Deer Park Drive, Suite E Monmouth Junction, NJ 08852 For general inquiries: [email protected] For sales inquiries, plea
New Product: UnitedSiC introduces Kelvin connection parts into UF3C “FASTUnited Silicon Carbide, Inc. 7 Deer Park Drive, Suite E Monmouth Junction
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