A cost-of-illness study of spina bifida in Italy
5 Tiziana Redaelli,7 Francesca Schioppa,7 Cristina Dieci8 1University of Pavia, Department of Drug Sciences, School of Pharmacy, Pavia, Italy; 2S.A.V
5 Tiziana Redaelli,7 Francesca Schioppa,7 Cristina Dieci8 1University of Pavia, Department of Drug Sciences, School of Pharmacy, Pavia, Italy; 2S.A.V
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In silicon carbide semiconductor device and manufacturing method therefor, acapacitor, an n channel planar power MOSFET, and an n channel planar
In this report we have summarized the characteristics of supply and demand for the long-term care workforce in Italy in the last decade and their
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Breakthrough of on-resistance Si limit by Super 3D MOSFET under 100V 4-8, 2006 Naples, Italy
Monte Carlo Simulation of Submicron Si MOSFET - Fischetti, Laux - 1988 ()Rudan (ed.), Technoprint, Bologna, Italy, p. 349–368, 1988
20161216-Transistor amplifiers are inherently rich in harmonics. This is because of the non-linear junction that all transistors have. The diplexer L
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Breakthrough of on-resistance Si limit by Super 3D MOSFET under 100V 4-8, 2006 Naples, Italy
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Monte Carlo Simulation of Submicron Si MOSFET - Fischetti, Laux - 1988 ()Rudan (ed.), Technoprint, Bologna, Italy, p. 349–368, 1988
a solid-state dc circuit breaker based on the silicon carbide (SiC) metal–oxide–semiconductor field-effect transistor (MOSFET), are a crucial problem
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Prevalence of cytomegalovirus infection in Italydoi:10.1017/s0950268800049062Between 1987 and 1989, the prevalence of antibody to cytomegalovirus (CMV) was
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A robustness study for 1.7 kV SiC MOSFETs is presented in this article. After evaluation of the critical energy required for failure, devices went under
Italy (2007.09.30-2007.10.4)] INTELEC 07 - 29th International evaluation of silicon-carbide MOSFET in three-phase high-power-factor
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