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area silicon carbide devices and manufacturing methods

A silicon carbide device is fabricated by forming a plurality of a same type of silicon carbide devices on at least a portion of a silicon carbide

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Described are silicon carbide filters for use with liquid metals such as liquid tin, as well as methods of using such a filter to remove particles from

pressure sensors with a square silicon carbide diaphragm

Although silicon is the preferred choice for microelectromechanical systems (MEMS) piezoresistive pressure sensors, such devices are not preferred for

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A system includes a silicon carbide (SiC) semiconductor device and a hermetically sealed packaging enclosing the SiC semiconductor device. The hermetically

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and finite element analysis of lightmass silicon carbide

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The inventive method comprises chemically-mechanically polishing a substrate comprising at least one layer of silicon carbide with a polishing composition

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Hossain, S. Saddam; Sarkar, S; Oraon, N Kr.; Ranjan, A, 2016: Pre-ceramic polymer-derived open/closed cell silicon carbide foam: microstructure,

| Growth and Self-Assembly of Silicon–Silicon Carbide

This work describes the growth of silicon–silicon carbide nanoparticles (Si–SiC) and their self-assembly into worm-like 1D hybrid nanostructures

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controlled, dielectrically isolated beta silicon carbide (

Semiconductor devices useful in high temperature sensing applications include a silicon carbide substrate, a silicon dioxide layer, and an outer layer of

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Micropipe defects existing in a silicon carbide single crystal are closed within the single crystal. At least a portion of the micropipe defects opened

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the Carbothermic Synthesis of Silicon Carbide | SpringerLink

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Semiconductor devices useful in high temperature sensing applications include a silicon carbide substrate, a silicon dioxide layer, and an outer layer of